Laurea magistrale in Ingegneria e scienze informatiche
The Physics of Integrated Devices (2012/2013)
| Course code |
4S00034 |
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Teacher
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Francesca Monti
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Coordinator
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Francesca Monti
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training credits
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6
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| Disciplinary sector |
FIS/01 - Experimental Physics
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| Teaching language |
Italian |
| Period |
I semestre dal Oct 1, 2012 al Jan 31, 2013.
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Lecture timetable
Educational objectives
Aim of the course is to give knowledge of the physics of semiconductor devices (p-n junction, MOSFET, CMOS; BJT) and related logic gates. The student will be able to compare various logic families in terms of their physical characteristics and performances.
Syllabus
Recall of Classical and Atomic Physics: work and energy, electric field, potential and potential energy, electric current, Ohm's law, linear circuits, resistivity and temperature dependence in metals and semiconductors, Bohr atom, table of elements
Crystal structure and electric conduction in metals and semiconductors: electron gas model of metals, conduction current in metals; covalent bond in semiconductors and the concept of hole, doped semiconductors, band theory, conduction and diffusion current in semiconductors
p-n junction: polarized and non polarized junction, I-V characteristics in direct and reverse polarization for Si and Ge, breakdown, junction diode, Zener diodes, OR/AND gates with diodes, commutation time
FET transistors: enrichment and depletion MOSFET, NMOS and PMOS. MOSFET inverters, CMOS, noise margins and commutation times
BJT transistors and RTL inverter: common emitter configuration, RTL inverter, noise margins, commutation times
Elementary digital circuits: basic gates in MOS and bipolar technologies: NOR and NAND MOS, NOR and NAND CMOS, NAND DTL, NAND HTL, NAND TTL; OR/NOR ECL
Comparison of logic families: propagation delay, power dissipation, noise margins, fan-out
Laboratory activities: logic gates study and characterization by Spice
Exam methods
Oral
Data from AA 2012/2013 are not available yet
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